MMIC Amplifiers 5G, VSAT and Point-to-Point Radio Applications High Power MMIC AmplifiersModelFreq Range (GHz)DC Power (W) To maintain IM3Gain Typ/Min (dB)P-1 (dBm)P-3 (dBm)IM3 (dBc) @Po=20dBm/toneOIP3 (dBm) @Po=20dBm/toneIn/Out Return Loss (dB)PackageMMA-172135-M5(2)(3)17-21 2735 -4542.5125X5 QFNMMA-212734-M5(2)(3)21-...

GaN Amplifiers Point-to-Point Radio and WiMAX GaN based High Power AmplifiersModelCase Code Sealed QFNFreq Range (GHz)Linear Gain Typ/Min (dB)Gain ± Flatness Typ/Max (dB)Input Return Loss Typ (dB)Output Return Loss Typ (dB)P3dB Typ (dBm)Pout @ 2.5% EVM Typ (dBm)IP3 Typ (dBm)DC Current Typ/Max (mA)MGA-242740-...

LTE/WiMax/WLAN AmplifiersOperates in all WiMAX / WLAN frequency ranges2.5, 3.5, and 5.5 GHzPave @ 2% EVM up to +29.5 dBm @ 3.5 GHzP-1dB options; +36.5dBm, +33dBm, and +30dBmTwo gain configurations; Single and dual stageIdeally suited for power amplification of WiMAX / WLANbase stations, or access pointsInput and Output...

Hybrid ModulesMiniature Drop-In Hybrid AmplifiersLow Noise, High Gain, and High Power OptionsGain Block, Temp Comp, and Regulator OptionsLow VSWR for Improved Cascade PerformanceSingle Voltage Supply and Low Current DesignUses MwT’s Space-Qualified GaAs Devices and Thin Film Substrates100% Eutectic Assembly T...

Low Cost Packages Amplifiers ModelPackage Available Sealed / HermeticGate Width / Length umGate Layout MethodGate Drain Source Bond Pads QtyChip Thick-ness & VIA Hole mil, y/nS.S. Gain @12GHz Typ/Max dBN.F. @12Ghz Typ/Max dBGa @ N.F @12GHz Typ/Min dBP-1dB @12GHz Typ dBmIP3 @12GHz Typ dBmNominal Chip Size um - umIde...

Gunn Diodes The MwT-GK Gunn Diode is targeted at CW and pulsed K-band (18-26.5 GHz) frequency source applications. Typical Applications for this device include Motion Detection and Surveillance, Microwave Transmitter and Receiver, Military Radar, Gunn Diode Oscillators and Radar Detectors. Part NumberFreq (GHz)P-1dB (...